product details 2N5551 is a general purpose NPN transistor built to use in high voltage circuits
The max collector to emitter voltage is 160V and collector to base voltage is 180V due to which it can be easily used in circuit using under 160 volts
The max output load this transistor can handle is 600mA and the max collector dissipation is 625mW
The transistor is built to use in general purpose applications therefore it can be used for amplification and switching
Features / technical specifications: - Transistor Type: NPN - Max Collector Current(IC): 6A or 600mA - Max Collector-Emitter Voltage (VCE): 160V - Max Collector-Base Voltage (VCB): 180V - Max Emitter-Base Voltage (VBE): 6V - Max Collector Dissipation (Pc): 625 mW - Max Transition Frequency (fT): 100 MHz - Minimum & Maximum DC Current Gain (hFE): 80 – 250 - Max Storage & Operating temperature Should be: -55 to +150 Centigrade
Product Description
product details
2N5551 is a general purpose NPN transistor built to use in high voltage circuits. The max collector to emitter voltage is 160V and collector to base voltage is 180V due to which it can be easily used in circuit using under 160 volts. The max output load this transistor can handle is 600mA and the max collector dissipation is 625mW. The transistor is built to use in general purpose applications therefore it can be used for amplification and switching.
Features / technical specifications:
- Transistor Type: NPN
- Max Collector Current(IC): 6A or 600mA
- Max Collector-Emitter Voltage (VCE): 160V
- Max Collector-Base Voltage (VCB): 180V
- Max Emitter-Base Voltage (VBE): 6V
- Max Collector Dissipation (Pc): 625 mW
- Max Transition Frequency (fT): 100 MHz
- Minimum & Maximum DC Current Gain (hFE): 80 – 250
- Max Storage & Operating temperature Should be: -55 to +150 Centigrade
