Transistors

Product Details BC557 Pin Configuration Pin Number Pin Name Description 1 Collector Current flows in through collector 2 Base Controls the biasing of transistor 3 Emitter Current Drains out through emitter Features Bi-Polar PNP Transistor DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in To-92 Package Applications Driver Modules like Relay Driver, LED driver, etc. Amplifier modules like Audio amplifiers, signal Amplifiers,s, etc. Darlington pair

Product Details Description : NPN silicon power transistors use UTC’s advanced technology to provide customers with high collector-base voltage, etc. C2073 transistor is designed for use in general purpose Power amplifier, vertical output application. Features 1. Collector-Emitter Voltage Vceo = 150V (Min) 2. DC Current Gain : hFE = 40-140 @Ic = 500mA 3. Complementary PNP 2SA940 C2073 Pinout : 1. Base 2. Collector 3. Emitter 4. Collector ( Case ) Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 150 V 2. Collector to Emitter Voltage : Vceo = 150 V 3. Emitter to Base Voltage : Vebo = 5.0 V 4. Collector Current : Ic = 1.5 A 5. Total Dissipation : Pc = 25 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C

Product Details Type - PNP Collector-Emitter Voltage: -150 V Collector-Base Voltage: -150 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation - 25 W DC Current Gain (hfe) - 40 to 140 Transition Frequency - 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package - TO-220

Product Details Type Designator: 2SA1837 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 230 V Maximum Collector-Emitter Voltage |Vce|: 230 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 70 MHz Collector Capacitance (Cc): 30 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: - Package: TO220

Product Details 1. High transition frequency: fT= 200 MHz (typ.) 2. Complementary to 2SA1930 Absolute Maximum Ratings Collector-base voltage : VCBO = 180 V Collector-emitter voltage : VCEO = 180 V Emitter-base voltage : VEBO = 5 V Collector current : IC = 2 A Base current : IB = 1 A Power Amplifier Applications Driver Stage Amplifier Applications

Product Details Type Designator: A970 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 4 pF Forward Current Transfer Ratio (hFE), MIN: 200

Product Details Characteristics of 2SB817 Transistor Type - PNP Collector-Emitter Voltage: -140 V Collector-Base Voltage: -160 V Emitter-Base Voltage: -6 V Collector Current: -12 A Collector Dissipation - 100 W DC Current Gain (hfe) - 60 to 200 Transition Frequency - 15 MHz Operating and Storage Junction Temperature Range -40 to +150 °C Package - TO-3P

Product Details Characteristics of 2SD817 Transistor Type - NPN Collector-Emitter Voltage: 600 V Collector-Base Voltage: 1500 V Emitter-Base Voltage: 6 V Collector Current: 1.5 A Collector Dissipation - 50 W DC Current Gain (hfe) - 10 to 30 Operating and Storage Junction Temperature Range -55 to +150 °C Package - TO-3

Product Details BD649 technical specifications, attributes, and parameters. BD649 Transistor, Npn, 100V, To-220; Transistor Polarity: NPN; Collector-Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:62.5W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes. Transition Frequency ft:10MHz; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:1500hFE; Transistor Case Style:TO-220; Operating Temperature Max:150°C; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Device Marking:BD649; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:62.5W; Termination Type:Through Hole ; Transistor Type:Darlington; Voltage Vcbo:120V.

Product Details Pin Configuration Pin Number Pin Name Description 1 Emitter Current Drains out through emitter, normally connected to ground 2 Collector Current flows in through collector, normally connected to load 3 Base Controls the biasing of transistor, Used to turn ON or OFF the transistor. Features Plastic casing NPN Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Emitter Base Breakdown Voltage (VBE) is 5V DC current gain (hfe) is 40 to 160 Available in To-225 package

Product Details Description Color TV Vertical Deflection Output Applications Power Switching Applications Features 1. High voltage: VCEO= −160 V 2. Large continuous collector current capability 3. Recommended for vertical deflection output & sound output applications for line-operated TV. 4. Complementary to 2SC2383. Maximum Ratings (Ta = 25°C) 1. Collector-base voltage : VCBO = −160 V 2. Collector-emitter voltage : VCEO = −160 V 3. Emitter-base voltage : VEBO = −6 V 4. Collector current : IC = −1 A 5. Base current : IB = −0.5 A 6. Collector power dissipation : PC = 900 mW 7. Junction temperature : Tj = 150 °C Applications : COLOR TV VERT. DEFELCTION OUTPUT

Product Details NPN type Transistors with 3 pins for inserting into the device. This B772has high dielectric strength, fast switching speed, large power dissipation, good current performance. For general purpose use, a great choice for your electronic devices. Specifications: PCM(Collector Power Dissipation): 1.25W Ic(Collector Current Continuous): 3A Vceo(Collector Emitter Voltage): 30V

Product Details Features Power output at 1kHz Load 8 ohm 50W Load 4 ohm 88W Power bandwidth +/- 1dB 20-50,000Hz Frequency response +/- 1dB 20-50,000Hz THD 20Hz-20kHz UP to rate power 0.05% Slew rate 20V/ microSec. Damping factor better than 50 Signal to noise ratio 88dB. Input voltage for maximum 100mV

Product Detail Features Power output at 1kHz Load 8 ohm 50W Load 4 ohm 88W Power bandwidth +/- 1dB 20-50,000Hz Frequency response +/- 1dB 20-50,000Hz THD 20Hz-20kHz UP to rate power 0.05% Slew rate 20V/ microSec. Damping factor better than 50 Signal to noise ratio 88dB. Input voltage for maximum 100mV.

Product Details These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery-operated products. Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

Product Details Attribute Value Transistor Type PNP Maximum DC Collector Current 8 A Maximum Collector-Emitter Voltage 250 V Package Type TO-220AB Mounting Type Through Hole Maximum Power Dissipation 50 W Transistor Configuration Single Maximum Collector Base Voltage 250 V Maximum Emitter Base Voltage 5 V Maximum Operating Frequency 30 MHz Pin Count 3 Number of Elements per Chip 1 Dimensions 9.28 x 10.28 x 4.82mm

Product Details Product Specifications Product AttributeAttribute ValueSearch Alternate Mfr Part Number 463634 Collector Current 16 A Collector to Base Voltage 250 V Collector to Emitter Voltage 250 V Configuration Common Base Dimensions 10.28 x 4.82 x 15.75 mm Emitter to Base Voltage 5 V Height 0.62" (15.75mm) Length 0.404" (10.28mm) Material Si Maximum Operating Temperature +150 °C Minimum Operating Temperature -65 °C Mounting Type Through Hole Number of Elements per Chip 1 Number of Pins 3 Operating Frequency 30 MHz Package Type TO-220 Polarity NPN Power Dissipation 50 W Primary Type Si Product Header Complementary Silicon Plastic Power Transistor Resistance, Thermal, Junction to Case 2.5 °C/W Series Transistor Series Temperature Operating Range -65 to +150 °C Transistor Type NPN Type Power Voltage, Breakdown, Collector to Emitter 250 V Voltage, Collector to Emitter, Saturation 0.5 V Width 0.19" (4.82mm)

Product Details MJE350 is a PNP high voltage transistor designed for applications where high voltage switching is required. The transistor is capable to handle a maximum load voltage of 300V which makes it ideal to use in many high voltage DC applications. The maximum load this transistor can handle is 500mA or 0.5A DC. MJE350 can not only use in high voltage circuits for switching but it can also be used in low voltage or battery-operated circuits as a switch. With the max collector dissipation of 20W, this transistor can also perform well in audio amplifier-related applications. In most audio amplifier applications it can be used with its NPN complementary MJE340 to get good audio output watts. Features / Technical Specifications: Package Type: TO-126 Transistor Type: NPN Max Collector Current(IC): – 5A Max Collector-Emitter Voltage (VCE): – 300V Max Collector-Base Voltage (VCB): – 300V Max Emitter-Base Voltage (VEBO): – 5V Max Collector Dissipation (Pc): 20 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (hFE): 30– 240 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Inverter & UPS Applications Switching Power Supply Applications Linear Power Supply Applications Battery Charger Circuits Audio Amplification DC High Voltage Switching Motor Controller Applications

Product Details MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications. The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications. The device can be used with any general high voltage switching application for the max load of 0.5A or 500mA DC. Additionally, it can also be used for switching in low-power and battery-operated applications. MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes. Features / Technical Specifications: Package Type: TO-126 Transistor Type: NPN Max Collector Current(IC): 5A Max Collector-Emitter Voltage (VCE): 300V Max Collector-Base Voltage (VCB): 300V Max Emitter-Base Voltage (VEBO): 3V Max Collector Dissipation (Pc): 20 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (hFE): 30– 240 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Linear Power Supplies Switching Power Supplies Inverter Circuits UPS Circuits Battery Charger Applications Motor Controllers Audio Amplification DC High Voltage Switching

Product Details TA12-600,Triac BTA16-600 in the Triac category has 600V Breakdown Voltage. BTA16-600 Triac has a 16A continuous output current. BTA16-600 TO-220 Triac Properties Name of the product BTA16-600 Product Category Triac / Thyristor / Diac Product Sub-Category Triac Package Type TO-220 Diode Type Triac Breakdown Voltage Vbr 600V Continuous Output Current 16A

Product Details Pin Configuration Pin Number Pin Name Description 1 Base Controls the biasing of the transistor, Used to turn ON or OFF the transistor 2 Collector Current flows in through collector, normally connected to load 3 Emitter Current Drains out through emitter, normally connected to ground Features Medium-power PNP Transistor DC Current Gain (hFE) 55 to 160 Continuous Collector current (IC) is 15A Collector-Emitter voltage (VCE) is 230 V Collector-Base voltage (VCB) is 230V Emitter Base Voltage (VBE) is 5V

Product Details The 2SC5200 is a high-power NPN Transistor with a collector-to-emitter voltage of 230V and collector current of 30A. • High breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications 1. POWER AMPLIFIER 2. Audio frequency Amplifier 3. AF /RF circuits 4. Low Slew rate devices 5. Push-Pull configuration circuits 6. high current switching (up to 15A) loads 7. Can be used as medium Power switches

Product Details Programmable Unijunction Transistor (UJT) 40V 300 mW Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Product Details Programmable Unijunction Transistor, 1uA Peak Current, 18uA Valley Current, 150mA Forward Anode Current, 300mW Power, -50°C to +100°C, 80ns Rise Time, TO-92 Case, The Programmable Unijunction Transistor or PUT is Similar to the Thyristor in that it has Four PN Layers, It has an Anode and a Cathode Connected to the First and the Last Layer and a Gate Connected to One of the Inner Layers, Application Includes Thyristor trigger, Oscillator, Pulse and Timing Circuits.