Product Details Type Designator: A970 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Max
Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 4 pF Forward Current Transfer Ratio (hFE), MIN: 200
