Product Details Characteristics of 2SB817 Transistor Type - PNP Collector-Emitter Voltage: -140 V Collector-Base Voltage: -160 V Emitter-Base Voltage: -6 V Collector Current: -12 A Collector Dissipation - 100 W DC Current Gain (hfe) - 60 to 200 Transition Frequency - 15 MHz Operating and Storage Junction Temperature Range -40 to +150 °C Package - TO-3P
Product Description
Product Details
Characteristics of 2SB817 Transistor
Type - PNP
Collector-Emitter Voltage: -140 V
Collector-Base Voltage: -160 V
Emitter-Base Voltage: -6 V
Collector Current: -12 A
Collector Dissipation - 100 W
DC Current Gain (hfe) - 60 to 200
Transition Frequency - 15 MHz
Operating and Storage Junction Temperature Range -40 to +150 °C
