Product Details MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications
The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications
The device can be used with any general high voltage switching application for the max load of 0.5A or 500mA DC
Additionally, it can also be used for switching in low-power and battery-operated applications
MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes
Features / Technical Specifications: Package Type: TO-126 Transistor Type: NPN Max Collector Current(IC): 5A Max Collector-Emitter Voltage (VCE): 300V Max Collector-Base Voltage (VCB): 300V Max Emitter-Base Voltage (VEBO): 3V Max Collector Dissipation (Pc): 20 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (hFE): 30– 240 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade Applications: Linear Power Supplies Switching Power Supplies Inverter Circuits UPS Circuits Battery Charger Applications Motor Controllers Audio Amplification DC High Voltage Switching
Product Description
Product Details
MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications. The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications. The device can be used with any general high voltage switching application for the max load of 0.5A or 500mA DC. Additionally, it can also be used for switching in low-power and battery-operated applications.
MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes.
Features / Technical Specifications:
Package Type: TO-126
Transistor Type: NPN
Max Collector Current(IC): 5A
Max Collector-Emitter Voltage (VCE): 300V
Max Collector-Base Voltage (VCB): 300V
Max Emitter-Base Voltage (VEBO): 3V
Max Collector Dissipation (Pc): 20 Watt
Max Transition Frequency (fT): 4 MHz
Minimum & Maximum DC Current Gain (hFE): 30– 240
Max Storage & Operating temperature Should Be: -65 to +150 Centigrade
