product details Features and specifications: - Type: Bi-Polar NPN epitaxial silicon Transistor - DC Current Gain (hFE):110-400 - Collector current (IC): 700mA - Collector Base Voltage (VCB): 0 V - Collector-Emitter Voltage (VCE): 20V - Emitter Base Voltage (VEB): 5V - Maximum Power dissipation: 1W - Junction temperature: 150⁰C - Current gain-bandwidth product: 100MHz - Available in TO-92 Package Applications and uses: - Class B Amplifiers - Push-pull circuits - Switch for small loads - Amplifying low gain signals to high gain
Product Description
product details
Features and specifications:
- Type: Bi-Polar NPN epitaxial silicon Transistor
- DC Current Gain (hFE):110-400
- Collector current (IC): 700mA
- Collector Base Voltage (VCB): 0 V
- Collector-Emitter Voltage (VCE): 20V
- Emitter Base Voltage (VEB): 5V
- Maximum Power dissipation: 1W
- Junction temperature: 150⁰C
- Current gain-bandwidth product: 100MHz
- Available in TO-92 Package
Applications and uses:
- Class B Amplifiers
- Push-pull circuits
- Switch for small loads
- Amplifying low gain signals to high gain
