Product Details
BD649 technical specifications, attributes, and parameters.
- BD649 Transistor, Npn, 100V, To-220;
- Transistor Polarity: NPN;
- Collector-Emitter Voltage V(Br)Ceo:100V;
- Dc Collector Current:8A;
- Power Dissipation Pd:62.5W;
- Transistor Mounting:through Hole;
- No. Of Pins:3Pins;
- Product Range:- Rohs Compliant: Yes.
- Transition Frequency ft:10MHz;
- Power Dissipation Pd:62.5W;
- DC Collector Current:8A;
- DC Current Gain hFE:1500hFE;
- Transistor Case Style:TO-220;
- Operating Temperature Max:150°C;
- Av Current Ic:8A;
- Collector Emitter Saturation Voltage Vce(on):2V;
- Continuous Collector Current Ic Max:8A;
- Current Ic Continuous a Max:8A;
- Current Ic hFE:3A;
- Device Marking:BD649;
- Full Power Rating Temperature:25°C;
- Operating Temperature Min:-55°C;
- Operating Temperature Range:-55°C to +150°C;
- Power Dissipation Ptot Max:62.5W;
- Termination Type:Through Hole
- ; Transistor Type:Darlington;
- Voltage Vcbo:120V.
