Modern Electronics Ltd
Home>Spare Parts>Transistors>FQP50N06 60V N-Channel MOSFET
FQP50N06 60V N-Channel MOSFET

FQP50N06 60V N-Channel MOSFET

0.0
0 ratings
Transistors
UGX4,000
Standard Parcel Details
Option: Default
Category
Transistors
Unit
pc
Minimum Order Quantity
1
Condition
New
Warranty
7 days

About this item

  • Product Details These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology
  • This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode
  • These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery-operated products
  • Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

Product Description

Product Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery-operated products.


Features

  1. • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
  2. • Low gate charge ( typical 31 nC)
  3. • Low Crss ( typical 65 pF)
  4. • Fast switching
  5. • 100% avalanche tested
  6. • Improved dv/dt capability
  7. • 175°C maximum junction temperature rating